The model of field induced junction on minority carrier MIS tunnel junction emitter transistor 少子MIS隧道结发射极晶体管场感应结模型
The effects of the minority carrier lifetime in the base, the base width and the emitter doping concentration on SEB susceptibility are verified. 得到了SEB灵敏度与载流子浓度、基区宽度和发射结掺杂浓度等参数的变化关系。提出了改善SEB的几种加固措施。
A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper. 本文提出了一种新的多晶硅发射区少数载流子注入理论。
Theory about Minority Carrier Injection into Polysilicon Emitter 多晶硅发射区中的少数载流子注入理论